DMG4468LFG
0.020
0.05
0.016
V GS = 4.5V
0.04
V GS = 4.5V
0.012
V GS = 10V
0.03
T A = 150°C
T A = 125°C
0.008
0.004
0
0.02
0.01
0
T A = 85°C
T A = 25°C
T A = -55°C
0
5 10 15 20 25
30
0
5
10 15 20 25
30
1.7
I D , DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.05
I D , DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.5
1.3
V GS = 4.5V
I D = 5.0A
V GS = 10V
0.04
1.1
I D = 10A
0.03
V GS = 4.5V
I D = 5.0A
0.02
0.9
V GS = 10V
0.7
0.5
0.01
0
I D = 10A
-50
-25
0 25 50 75 100 125 150
-50
-25 0 25 50 75 100 125 150
2.0
T A , AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
20
T A , AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
1.6
1.2
0.8
0.4
0
I D = 1mA
I D = 250μA
16
12
8
4
0
T A = 25°C
-50 -25 0 25 50 75 100 125 150
T A , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0.2
0.4 0.6 0.8 1.0
V SD , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
DMG4468LFG
Document number: DS31857 Rev. 2 - 2
3 of 6
www.diodes.com
October 2009
? Diodes Incorporated
相关PDF资料
DMG4468LK3-13 MOSFET N-CH 30V 9.7A TO252
DMG4496SSS-13 MOSFET N-CH 30V 10A SO8
DMG4511SK4-13 MOSFET N/P-CH 35V TO252-4L
DMG4710SSS-13 MOSFET N-CH 30V 12.7A SO8
DMG4712SSS-13 MOSFET N-CH 30V 11.2A 8SOIC
DMG4800LFG-7 MOSFET N-CH 30V 7.44A 8DFN
DMG4800LK3-13 MOSFET N-CH 30V 10A TO252
DMG4800LSD-13 MOSFET 2N-CH 30V 8.54A SO8
相关代理商/技术参数
DMG4468LFG-7 功能描述:MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4468LK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMG4468LK3-13 功能描述:MOSFET ENHANCE MODE MOSFET N Chan 30V/6.3-9.7A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4496SSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMG4496SSS-13 功能描述:MOSFET MOSFET N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4511SK4 制造商:Diodes Incorporated 功能描述:MOSFET NP CH COM PAIR 35V TO2524L 制造商:Diodes Incorporated 功能描述:MOSFET, NP CH, COM PAIR, 35V, TO2524L 制造商:Diodes Incorporated 功能描述:MOSFET, NP CH, COM PAIR, 35V, TO2524L, Transistor Polarity:N and P Channel, Continuous Drain Current Id:8.6A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.025ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:1.54W , RoHS Compliant: Yes
DMG4511SK4-13 功能描述:MOSFET MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4511SK4-7 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.